32 bit DRAM

Results: 394
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Type Memory Size Data Bus Width Maximum Clock Frequency Package/Case Organisation Access Time Supply Voltage - Min Supply Voltage - Max Minimum Operating Temperature Maximum Operating Temperature Series Packaging
Infineon Technologies S80KS2564GACHA043
Infineon Technologies DRAM SPCM Non-Stocked Lead-Time 26 Weeks
Min.: 2.500
Mult.: 2.500
: 2.500

HyperRAM 256 Mbit 32 bit 200 MHz FBGA-49 35 ns 1.7 V 2 V - 40 C + 85 C Reel
Infineon Technologies S80KS2564GACHB040
Infineon Technologies DRAM SPCM Non-Stocked Lead-Time 26 Weeks
Min.: 260
Mult.: 260

HyperRAM 256 Mbit 32 bit 200 MHz FBGA-49 35 ns 1.7 V 2 V - 40 C + 105 C Tray
ISSI DRAM 512M, 2.5V, Mobile SDRAM, 16Mx32, 133Mhz, 90 ball BGA (8mmx13mm) RoHS, T&R Non-Stocked Lead-Time 8 Weeks
Min.: 2.500
Mult.: 2.500
: 2.500

SDRAM Mobile 512 Mbit 32 bit 133 MHz BGA-90 16 M x 32 6 ns 2.3 V 3 V 0 C + 70 C IS42RM32160E Reel
ISSI DRAM 512M, 3.3V, Mobile SDRAM, 16Mx32, 133Mhz, 90 ball BGA (8mmx13mm) RoHS, T&R Non-Stocked Lead-Time 8 Weeks
Min.: 2.500
Mult.: 2.500
: 2.500

SDRAM Mobile 512 Mbit 32 bit 133 MHz BGA-90 16 M x 32 6 ns 2.7 V 3.6 V 0 C + 70 C IS42SM32160E Reel
ISSI DRAM 512M, 2.5V, Mobile SDRAM, 16Mx32, 133Mhz, 90 ball BGA (8mmx13mm) RoHS Non-Stocked Lead-Time 8 Weeks
Min.: 240
Mult.: 240

SDRAM Mobile 512 Mbit 32 bit 133 MHz BGA-90 16 M x 32 6 ns 2.3 V 3 V 0 C + 70 C IS42RM32160E Tray
ISSI DRAM 512M, 3.3V, Mobile SDRAM, 16Mx32, 133Mhz, 90 ball BGA (8mmx13mm) RoHS Non-Stocked Lead-Time 8 Weeks
Min.: 240
Mult.: 240

SDRAM Mobile 512 Mbit 32 bit 133 MHz BGA-90 16 M x 32 6 ns 2.7 V 3.6 V 0 C + 70 C IS42SM32160E Tray
ISSI DRAM Automotive (Tc: -40 to +95C), 4G, 1.06-1.17/1.70-1.95V, LPDDR4, 128Mx32, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS, T&R Non-Stocked Lead-Time 40 Weeks
Min.: 2.500
Mult.: 2.500
: 2.500

SDRAM - LPDDR4 4 Gbit 32 bit 1.6 GHz BGA-200 128 M x 32 1.06 V 1.17 V - 40 C + 95 C Reel
ISSI DRAM Automotive (Tc: -40 to +105C), 4G, 1.06-1.17/1.70-1.95V, LPDDR4, 128Mx32, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS, T&R Non-Stocked Lead-Time 40 Weeks
Min.: 2.500
Mult.: 2.500
: 2.500

SDRAM - LPDDR4 4 Gbit 32 bit 1.6 GHz BGA-200 128 M x 32 1.06 V 1.17 V - 40 C + 105 C Reel
ISSI DRAM Automotive (Tc: -40 to +95C), 4G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 128Mx32, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS Non-Stocked Lead-Time 40 Weeks
Min.: 136
Mult.: 136

SDRAM - LPDDR4X 4 Gbit 32 bit 1.6 GHz BGA-200 128 M x 32 570 mV 650 mV - 40 C + 95 C Tray
ISSI DRAM Automotive (Tc: -40 to +95C), 4G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 128Mx32, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS, T&R Non-Stocked Lead-Time 40 Weeks
Min.: 2.500
Mult.: 2.500
: 2.500

SDRAM - LPDDR4X 4 Gbit 32 bit 1.6 GHz BGA-200 128 M x 32 570 mV 650 mV - 40 C + 95 C Reel
ISSI DRAM Automotive (Tc: -40 to +105C), 4G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 128Mx32, 1600MHz, 200 ball BGA(10mmx14.5mm, 1.1mm max thickness) RoHS Non-Stocked Lead-Time 40 Weeks
Min.: 136
Mult.: 136

SDRAM - LPDDR4X 4 Gbit 32 bit 1.6 GHz BGA-200 128 M x 32 570 mV 650 mV - 40 C + 105 C Tray
ISSI DRAM 4G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 128Mx32, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS, T&R Non-Stocked Lead-Time 36 Weeks
Min.: 2.500
Mult.: 2.500
: 2.500

SDRAM - LPDDR4X 4 Gbit 32 bit 1.6 GHz BGA-200 128 M x 32 570 mV 650 mV - 40 C + 95 C Reel
ISSI DRAM Automotive (Tc: -40 to +105C), 4G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 128Mx32, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS, T&R Non-Stocked
Min.: 2.500
Mult.: 2.500

SDRAM - LPDDR4X 4 Gbit 32 bit 1.6 GHz BGA-200 128 M x 32 570 mV 650 mV - 40 C + 105 C Tray
ISSI DRAM 512M, 2.5V, Mobile SDRAM, 16Mx32, 133Mhz, 90 ball BGA (8mmx13mm) RoHS, IT, T&R Non-Stocked Lead-Time 16 Weeks
Min.: 2.500
Mult.: 2.500
: 2.500

SDRAM Mobile 512 Mbit 32 bit 133 MHz BGA-90 16 M x 32 6 ns 2.3 V 3 V - 40 C + 85 C IS42RM32160E Reel
ISSI DRAM 256M, 2.5V, Mobile SDRAM, 8Mx32, 133Mhz, 90 ball BGA (8mmx13mm) RoHS, IT, T&R Non-Stocked Lead-Time 16 Weeks
Min.: 2.500
Mult.: 2.500
: 2.500

SDRAM Mobile 256 Mbit 32 bit 133 MHz BGA-90 8 M x 32 6 ns 2.3 V 3 V - 40 C + 85 C IS42RM32800K Reel
ISSI DRAM 512M, 3.3V, SDRAM, 16Mx32, 166MHz, 90 ball BGA (8mmx13mm) RoHS, T&R Non-Stocked Lead-Time 16 Weeks
Min.: 2.500
Mult.: 2.500
: 2.500

SDRAM 512 Mbit 32 bit 167 MHz BGA-90 16 M x 32 6 ns 3 V 3.6 V 0 C + 70 C IS42S32160F Reel
ISSI DRAM 512M, 3.3V, SDRAM, 16Mx32, 166MHz, 86 pin TSOP II, RoHS, IT, T&R Non-Stocked Lead-Time 16 Weeks
Min.: 1.500
Mult.: 1.500
: 1.500

SDRAM 512 Mbit 32 bit 167 MHz TSOP-II-86 16 M x 32 6 ns 3 V 3.6 V - 40 C + 85 C IS42S32160F Reel
ISSI DRAM 512M, 3.3V, SDRAM, 16Mx32, 166MHz, 86 pin TSOP II, RoHS T&R Non-Stocked Lead-Time 16 Weeks
Min.: 1.500
Mult.: 1.500
: 1.500

SDRAM 512 Mbit 32 bit 167 MHz TSOP-II-86 16 M x 32 6 ns 3 V 3.6 V 0 C + 70 C IS42S32160F Reel
ISSI DRAM 512M, 3.3V, SDRAM, 16Mx32, 133Mhz @CL2 , 90 ball BGA (8mmx13mm) RoHS Non-Stocked Lead-Time 16 Weeks
Min.: 240
Mult.: 240

SDRAM 512 Mbit 32 bit 133 MHz BGA-90 16 M x 32 6 ns 3 V 3.6 V 0 C + 70 C IS42S32160F Reel
ISSI DRAM 512M, 3.3V, SDRAM, 16Mx32, 133Mhz @CL2 , 90 ball BGA (8mmx13mm) RoHS, IT Non-Stocked Lead-Time 16 Weeks
Min.: 240
Mult.: 240

SDRAM 512 Mbit 32 bit 133 MHz BGA-90 16 M x 32 6 ns 3 V 3.6 V - 40 C + 85 C IS42S32160F Reel
ISSI DRAM 512M, 3.3V, SDRAM, 16Mx32, 133Mhz @CL2 , 90 ball BGA (8mmx13mm) RoHS, IT, T&R Non-Stocked Lead-Time 16 Weeks
Min.: 2.500
Mult.: 2.500
: 2.500

SDRAM 512 Mbit 32 bit 133 MHz BGA-90 16 M x 32 6 ns 3 V 3.6 V - 40 C + 85 C IS42S32160F Reel
ISSI DRAM 512M, 3.3V, SDRAM, 16Mx32, 133Mhz @CL2 , 90 ball BGA (8mmx13mm) RoHS T&R Non-Stocked Lead-Time 16 Weeks
Min.: 2.500
Mult.: 2.500
: 2.500

SDRAM 512 Mbit 32 bit 133 MHz BGA-90 16 M x 32 6 ns 3 V 3.6 V 0 C + 70 C IS42S32160F Reel
ISSI DRAM 512M, 3.3V, SDRAM, 16Mx32, 133Mhz @CL2 , 86 pin TSOP II, RoHS Non-Stocked Lead-Time 16 Weeks
Min.: 108
Mult.: 108

SDRAM 512 Mbit 32 bit 133 MHz TSOP-II-86 16 M x 32 6 ns 3 V 3.6 V 0 C + 70 C IS42S32160F
ISSI DRAM 512M, 3.3V, SDRAM, 16Mx32, 133Mhz @CL2 , 86 pin TSOP II, RoHS, IT Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1
: 108

SDRAM 512 Mbit 32 bit 133 MHz TSOP-II-86 16 M x 32 6 ns 3 V 3.6 V - 40 C + 85 C IS42S32160F Reel, Cut Tape
ISSI DRAM 512M, 3.3V, SDRAM, 16Mx32, 133Mhz @CL2 , 86 pin TSOP II, RoHS, IT, T&R Non-Stocked Lead-Time 16 Weeks
Min.: 1.500
Mult.: 1.500
: 1.500

SDRAM 512 Mbit 32 bit 133 MHz TSOP-II-86 16 M x 32 6 ns 3 V 3.6 V - 40 C + 85 C IS42S32160F Reel