512 Mbit DRAM

Results: 335
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Type Memory Size Data Bus Width Maximum Clock Frequency Package/Case Organisation Access Time Supply Voltage - Min Supply Voltage - Max Minimum Operating Temperature Maximum Operating Temperature Series Packaging
Alliance Memory DRAM 512M 166MHz 16Mx32 Mobile LP SDRAM IT 53In Stock
380Expected 8/26/2026
Min.: 1
Mult.: 1

SDRAM Mobile 512 Mbit 32 bit 166 MHz FBGA-90 16 M x 32 5.5 ns 1.7 V 1.95 V - 40 C + 85 C AS4C16M32MSA Tray
Alliance Memory DRAM SDR, 512MB, 16M x 32, 3.3V, 86PIN TSOP II, 133 MHZ, Industrial Temp - Tray 29In Stock
Min.: 1
Mult.: 1

SDRAM 512 Mbit 32 bit 133 MHz TSOP-II-86 16 M x 32 17 ns 3 V 3.6 V - 40 C + 85 C AS4C16M32SC Tray
Zentel Japan DRAM DDR2 512Mb, 64Mx8, 800 at CL5, 1.8V, FBGA-60 63In Stock
Min.: 1
Mult.: 1

SDRAM - DDR2 512 Mbit 8 bit 400 MHz FPGA-60 64 M x 8 400 ps 1.7 V 1.9 V 0 C + 85 C DDR2 Tray
Alliance Memory DRAM 512Mb, 3.3V, 200Mhz 32M x 16 DDR 1In Stock
Min.: 1
Mult.: 1

SDRAM - DDR 512 Mbit 16 bit 200 MHz TSOP-II-66 32 M x 16 700 ps 2.3 V 2.7 V 0 C + 70 C AS4C32M16D1 Tray
ISSI DRAM 512M, 3.3V, SDRAM, 16Mx32, 166MHz, 90 ball BGA (8mmx13mm) RoHS, IT, T&R 3In Stock
Min.: 1
Mult.: 1
: 2.500

SDRAM 512 Mbit 32 bit 167 MHz BGA-90 16 M x 32 6 ns 3 V 3.6 V - 40 C + 85 C IS42S32160F Reel, Cut Tape, MouseReel
ISSI DRAM 512M, 1.8V, 400Mhz 32M x 16 DDR2 77In Stock
Min.: 1
Mult.: 1

SDRAM - DDR2 512 Mbit 16 bit 400 MHz BGA-84 32 M x 16 400 ps 1.7 V 1.9 V - 40 C + 85 C IS46DR16320D Tray
Intelligent Memory DRAM DDR2 512Mb, 1.8V, 32Mx16, 400MHz (800Mbps), 0C to +95C, FBGA-84
418Expected 5/26/2026
Min.: 1
Mult.: 1

SDRAM - DDR2 512 Mbit 16 bit 400 MHz FBGA-60 32 M x 16 400 ps 1.7 V 1.9 V - 40 C + 95 C IM5116D2 Tray
Intelligent Memory DRAM ECC SDRAM, 512Mb, 3.3V, 64Mx8, 133MHz (133Mbps), -40C to +85C, TSOPII-54
122Expected 8/5/2026
Min.: 1
Mult.: 1

SDRAM 512 Mbit 8 bit 133 MHz TSOP-II-54 64 M x 8 5.4 ns 3 V 3.6 V - 40 C + 85 C IME5108SD Tray
ISSI DRAM 512M, 2.5V, DDR 32Mx16, 200MHz, 66 pin TSOP II (400 mil) RoHS 28In Stock
Min.: 1
Mult.: 1

SDRAM - DDR 512 Mbit 16 bit 200 MHz TSOP-II-66 32 M x 16 5 ns 2.3 V 2.7 V 0 C + 70 C IS43R16320E
AP Memory APS512XXN-OB9-BG
AP Memory DRAM IoT RAM 512Mb OPI (x8,x16) DDR 250MHz, 1.8V, Ind. Temp., BGA24
6.519Expected 6/5/2026
Min.: 1
Mult.: 1

PSRAM (Pseudo SRAM) 512 Mbit 8 bit / 16 bit 250 MHz BGA-24 64 M x 8/32 M x 16 1.62 V 1.98 V - 40 C + 85 C IoT RAM Tray
Infineon Technologies DRAM SPCM
662Expected 9/17/2026
Min.: 1
Mult.: 1

HyperRAM 512 Mbit 8 bit 200 MHz FBGA-24 64 M x 8 35 ns 1.7 V 2 V - 40 C + 85 C Tray
AP Memory DRAM 512Mb 200MHz 18V ITemp Suggested Alt APS512XXN-OB9-BG same device higher speed
2.880Expected 6/5/2026
Min.: 1
Mult.: 1

PSRAM (Pseudo SRAM) 512 Mbit 8 bit / 16 bit 200 MHz BGA-24 64 M x 8/32 M x 16 1.62 V 1.98 V - 40 C + 85 C IoT RAM Tray
ISSI DRAM SDRAM,512M,3.3V,RoHs 166MHz,16Mx32, IT
3.693Expected 8/11/2026
Min.: 1
Mult.: 1

SDRAM 512 Mbit 32 bit 167 MHz BGA-90 16 M x 32 6 ns 3 V 3.6 V - 40 C + 85 C IS42S32160F Tray
ISSI DRAM 512M, 3.3V, SDRAM, 32Mx16, 143MHz, 54 pin Copper TSOP II (400 mil) RoHS, IT
1.580Expected 5/29/2026
Min.: 1
Mult.: 1

SDRAM 512 Mbit 16 bit 143 MHz TSOP-II-54 32 M x 16 5.4 ns 3 V 3.6 V - 40 C + 85 C IS42S16320F
ISSI DRAM 512Mb 1.8V 200Mhz Mobile DDR
1.200Expected 7/16/2026
Min.: 1
Mult.: 1

SDRAM Mobile - DDR 512 Mbit 16 bit 200 MHz BGA-60 32 M x 16 5 ns 1.7 V 1.95 V - 40 C + 85 C IS43LR16320C Tray
Alliance Memory DRAM DDR2, 512Mb, 32M x 16, 1.8V, 84-ball BGA, 400 MHz, Commercial Temp - Tray
1.026Expected 5/29/2026
Min.: 1
Mult.: 1

SDRAM - DDR2 512 Mbit 16 bit 400 MHz FBGA-84 32 M x 16 400 ps 1.7 V 1.9 V 0 C + 95 C AS4C32M16D2A Tray
Alliance Memory DRAM DDR1, 512Mb, 32M X 16, 2.5V, 66pin TSOP II, 200 MHz, Industrial Temp (A)
58Expected 6/24/2026
Min.: 1
Mult.: 1

SDRAM - DDR 512 Mbit 16 bit 200 MHz TSOP-II-66 32 M x 16 700 ps 2.3 V 2.7 V - 40 C + 85 C AS4C32M16D1A Tray
ISSI DRAM 512M 1.2/1.8V 32Mx16 400MHz 134ball BGA
171Expected 10/8/2026
Min.: 1
Mult.: 1

SDRAM Mobile - LPDDR2 512 Mbit 16 bit 400 MHz FBGA-134 32 M x 16 1.14 V 1.95 V - 40 C + 85 C IS43LD32160A
Intelligent Memory DRAM ECC SDRAM, 512Mb, 3.3V, 64Mx8, 133MHz (133Mbps), 0C to +70C, TSOPII-54 Lead-Time 12 Weeks
Min.: 1
Mult.: 1

SDRAM 512 Mbit 8 bit 133 MHz TSOP-II-54 64 M x 8 5.4 ns 3 V 3.6 V 0 C + 70 C IME5108SD Tray
Intelligent Memory DRAM ECC SDRAM, 512Mb, 3.3V, 32Mx16, 133MHz (133Mbps), -40C to +85C, TSOPII-54 Non-Stocked Lead-Time 12 Weeks
Min.: 1
Mult.: 1

SDRAM 512 Mbit 16 bit 133 MHz TSOP-II-54 32 M x 16 5.4 ns 3 V 3.6 V - 40 C + 85 C IME5116SD Tray
Zentel Japan DRAM DDR2 512Mb, 32Mx16, 1066 at CL7, 1.8V, FBGA-84 Non-Stocked Lead-Time 12 Weeks
Min.: 2.000
Mult.: 2.000

SDRAM - DDR2 512 Mbit 16 bit 533 MHz FPGA-84 32 M x 16 350 ps 1.7 V 1.9 V 0 C + 85 C DDR2 Tray
Zentel Japan DRAM DDR1 512Mb, 32Mx16, 200MHz at CL3, 2.5V, TSOPII-66 Non-Stocked Lead-Time 12 Weeks
Min.: 1
Mult.: 1

SDRAM - DDR 512 Mbit 16 bit 200 MHz TSOP-II-66 32 M x 16 700 ps 2.3 V 2.7 V 0 C + 70 C DDR1 Tray
ISSI DRAM 512M, 2.5V, DDR 32Mx16, 166MHz, 66 pin TSOP II (400 mil) RoHS, IT, T&R Non-Stocked Lead-Time 12 Weeks
Min.: 1.500
Mult.: 1.500
: 1.500

SDRAM - DDR 512 Mbit 16 bit 166 MHz TSOP-II-66 32 M x 16 6 ns 2.3 V 2.7 V - 40 C + 85 C IS43R16320D Reel
ISSI DRAM 512M, 2.5V, Mobile SDRAM, 16Mx32, 133Mhz, 90 ball BGA (8mmx13mm) RoHS, T&R Non-Stocked Lead-Time 8 Weeks
Min.: 2.500
Mult.: 2.500
: 2.500

SDRAM Mobile 512 Mbit 32 bit 133 MHz BGA-90 16 M x 32 6 ns 2.3 V 3 V 0 C + 70 C IS42RM32160E Reel
ISSI DRAM 512M, 3.3V, Mobile SDRAM, 16Mx32, 133Mhz, 90 ball BGA (8mmx13mm) RoHS, T&R Non-Stocked Lead-Time 8 Weeks
Min.: 2.500
Mult.: 2.500
: 2.500

SDRAM Mobile 512 Mbit 32 bit 133 MHz BGA-90 16 M x 32 6 ns 2.7 V 3.6 V 0 C + 70 C IS42SM32160E Reel