DTMOSV Super Junction MOSFETs

Toshiba DTMOSV Super Junction MOSFETs are N-channel, deep trench semiconductor technology for high-efficient power MOSFETs. The DTMOSV operates with lower EMI noise, and a 17% reduction On-Resistance RDS(ON) compared to the DTMOSIV MOSFETs. The DTMOSV has a deep trench etching process, that results in a narrowing of cell pitch, and a lowering of RDS(ON) when compared with more conventional planar processes. DTMOSV Super Junction MOSFETs are ideal to improve performance and facilitate the design of power conversion applications. Applications include switching power supplies, power factor correction (PFC) designs, and LED lighting.

Results: 12
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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Packaging
Toshiba MOSFETs N-Ch DTMOSV 600V 80W 590pF 9.7A
Datasheet
3.850In Stock
Min.: 1
Mult.: 1
: 2.000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 9.7 A 380 mOhms 30 V 4 V 20 nC - 55 C + 150 C 80 W Enhancement DTMOSV Reel, Cut Tape
Toshiba MOSFETs N-Ch DTMOSV 650V 100W 730pF 11.5A
Datasheet
3.372In Stock
Min.: 1
Mult.: 1
: 2.000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 11.5 A 290 mOhms 30 V 4 V 25 nC - 55 C + 150 C 100 W Enhancement DTMOSV Reel, Cut Tape
Toshiba MOSFETs N-Ch DTMOSV 650V 60W 380pF 7.0A
Datasheet
1.353In Stock
MouseReel Available
Min.: 1
Mult.: 1
: 2.000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 7 A 560 mOhms 30 V 4 V 14.5 nC - 55 C + 150 C 60 W Enhancement DTMOSV Reel, Cut Tape, MouseReel
Toshiba MOSFETs N-Ch DTMOSV 600V 35W 730pF 11.5A
Datasheet
1.038In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 11.5 A 290 mOhms 30 V 4 V 25 nC - 55 C + 150 C 35 W Enhancement DTMOSV Tube
Toshiba MOSFETs N-Ch DTMOSV 600V 60W 380pF 7.0A
Datasheet
1.900In Stock
MouseReel Available
Min.: 1
Mult.: 1
: 2.000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 7 A 560 mOhms 30 V 4 V 14.5 nC - 55 C + 150 C 60 W Enhancement DTMOSV Reel, Cut Tape, MouseReel
Toshiba MOSFETs N-Ch DTMOSV 650V 35W 730pF 11.5A
Datasheet
97In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 11.5 A 290 mOhms 30 V 4 V 25 nC - 55 C + 150 C 35 W Enhancement DTMOSV Tube
Toshiba MOSFETs N-Ch DTMOSV 650V 100W 730pF 11.5A
Datasheet
636In Stock
Min.: 1
Mult.: 1
: 2.000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 11.5 A 290 mOhms 30 V 4 V 25 nC - 55 C + 150 C 100 W Enhancement DTMOSV Reel, Cut Tape
Toshiba MOSFETs N-Ch DTMOSV 650V 30W 380pF 7.0A
Datasheet
177In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 7 A 560 mOhms 30 V 4 V 14.5 nC - 55 C + 150 C 30 W Enhancement DTMOSV Tube
Toshiba MOSFETs N-Ch DTMOSV 600V 30W 590pF 9.7A
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 9.7 A 380 mOhms 30 V 4 V 20 nC - 55 C + 150 C 30 W Enhancement DTMOSV Tube
Toshiba MOSFETs TO-220SIS PD=30W 1MHz PWR MOSFET TRNS
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 9.7 A 380 mOhms 30 V 4 V 20 nC - 55 C + 150 C 30 W Enhancement DTMOSV Tube
Toshiba MOSFETs N-Ch DTMOSV 650V 80W 590pF 9.7A
Datasheet
Non-Stocked Lead-Time 24 Weeks
Min.: 2.000
Mult.: 2.000
: 2.000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 9.7 A 380 mOhms 30 V 4 V 20 nC - 55 C + 150 C 80 W Enhancement DTMOSV Reel
Toshiba MOSFETs N-Ch DTMOSV 600V 30W 380pF 7.0A
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 7 A 560 mOhms 30 V 4 V 14.5 nC - 55 C + 150 C 30 W Enhancement DTMOSV Tube