CoolSiC™ 1700V SiC Trench MOSFETs

Infineon CoolSiC™ 1700V SiC Trench MOSFETs feature a revolutionary Silicon Carbide material optimized for fly-back topologies. The SiC Trench MOSFETs offer a 12V/0V gate-source voltage compatible with most fly-back controllers.

Results: 3
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename
Infineon Technologies SiC MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package 6.934In Stock
3.000Expected 7/29/2027
Cut Tape
6,50 €
3,53 €
3,24 €
3,07 €
Reel
2,74 €
Min.: 1
Mult.: 1
Max.: 1.000
: 1.000
SMD/SMT TO-263-7 1 Channel 1.7 kV 9.8 A 450 mOhms - 10 V, + 20 V 4.5 V 11 nC - 55 C + 175 C 107 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package 19In Stock
25.000On Order
Cut Tape
4,59 €
2,43 €
2,22 €
1,93 €
Reel
1,80 €
Min.: 1
Mult.: 1
: 1.000
SMD/SMT TO-263-7 1 Channel 1.7 kV 5.2 A 1 Ohms - 10 V, + 20 V 4.5 V 5 nC - 55 C + 175 C 68 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package 57In Stock
2.000On Order
Cut Tape
5,56 €
2,94 €
2,67 €
2,43 €
Reel
2,16 €
Min.: 1
Mult.: 1
: 1.000
SMD/SMT TO-263-7 1 Channel 1.7 kV 7.4 A 650 mOhms - 10 V, + 20 V 4.5 V 8 nC - 55 C + 175 C 88 W Enhancement CoolSiC