SiC MOSFETs

GeneSiC Semiconductor’s G3R™ Silicon Carbide (SiC) MOSFETs offer RDS(ON) levels from 12mΩ to 1000mΩ and robustness for efficiency and system reliability in automotive and industrial applications. These MOSFETs deliver a fast switching frequency, increased power density, reduced ringing (EMI), and a compact size. The G3R SiC MOSFETs are offered in optimized low-inductance discrete packages (SMD and through-hole). The modules are highly optimized for power system designs that require elevated efficiency levels at all operating temperatures and ultra-fast switching speeds with ultra-low losses. GeneSiC SiC MOSFETs provide faster switching and lower ON resistance than silicon-based products. Additional features include superior electric characteristics at high temperatures and significantly lower switching loss, allowing smaller peripheral components to be used.

Results: 8
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode
GeneSiC Semiconductor SiC MOSFETs 1200V 12mohm TO-247-4 G3R SiC MOSFET 1.674In Stock
55,91 €
53,36 €
49,71 €
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 111 A 12 mOhms - 10 V, + 22 V 2.7 V 288 nC - 55 C + 175 C 567 W Enhancement
GeneSiC Semiconductor SiC MOSFETs 1700V 20mohm TO-247-4 G3R SiC MOSFET 102In Stock
101,43 €
99,80 €
90,43 €
89,29 €
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.7 kV 101 A 20 mOhms - 5 V, + 15 V 2.7 V 256 nC - 55 C + 175 C 569 W Enhancement
GeneSiC Semiconductor SiC MOSFETs 1200V 30mohm TO-247-4 G3R SiC MOSFET 289In Stock
26,09 €
25,90 €
17,22 €
16,78 €
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 70 A 30 mOhms - 5 V, + 15 V 2.7 V 118 nC - 55 C + 175 C 281 W Enhancement
GeneSiC Semiconductor SiC MOSFETs 1700V 45mohm TO-247-4 G3R SiC MOSFET 109In Stock
35,23 €
25,86 €
25,58 €
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.7 kV 48 A 45 mOhms - 5 V, + 15 V 2.7 V 106 nC - 55 C + 175 C 284 W Enhancement
GeneSiC Semiconductor SiC MOSFETs 1700V 160mohm TO-247-3 G3R SiC MOSFET 5In Stock
1.800On Order
17,27 €
15,45 €
9,74 €
8,90 €
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.7 kV 17 A 160 mOhms - 5 V, + 15 V 2.7 V 29 nC - 55 C + 175 C 138 W Enhancement
GeneSiC Semiconductor SiC MOSFETs 1700V 450mohm TO-247-3 G3R SiC MOSFET
1.740Expected 10/5/2026
8,74 €
5,35 €
5,01 €
4,81 €
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.7 kV 7 A 450 mOhms - 5 V, + 15 V 2.7 V 13 nC - 55 C + 175 C 70 W Enhancement
GeneSiC Semiconductor SiC MOSFETs 1700V 450mohm TO-263-7 G3R SiC MOSFET
800Expected 10/1/2026
Cut Tape
8,59 €
6,24 €
5,99 €
5,62 €
Reel
5,24 €
Min.: 1
Mult.: 1
: 800
SMD/SMT TO-263-7 1 Channel 1.7 kV 8 A 630 mOhms - 5 V, + 15 V 2.7 V 13 nC - 55 C + 175 C 71 W Enhancement
GeneSiC Semiconductor SiC MOSFETs 1200V 40mohm TO-247-4 G3R SiC MOSFET Non-Stocked Lead-Time 26 Weeks
21,77 €
21,54 €
13,85 €
13,14 €
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 55 A 40 mOhms - 5 V, + 15 V 2.7 V 88 nC - 55 C + 175 C 228 W Enhancement