SRAM for Data Acquisition

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SRAM for Data Acquisition

SRAM stands for static random-access memory, a kind of memory chip that uses flip-flop type latching circuitry to store by the bit. SRAM can use very little power when sitting idle for long periods, and thus is better suited for certain applications over other types of memory. Learn More

Results: 466
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Memory Size Organisation Access Time Maximum Clock Frequency Interface Type Supply Voltage - Max Supply Voltage - Min Supply Current - Max Minimum Operating Temperature Maximum Operating Temperature Mounting Style Package/Case Packaging
ISSI SRAM Pseudo SRAM 64Mb
960Expected 2/4/2027
Min.: 1
Mult.: 1

64 Mbit 4 M x 16 70 ns 104 MHz 1.95 V 1.7 V 30 mA - 40 C + 85 C SMD/SMT VFBGA-54
ISSI SRAM Pseudo SRAM, 64Mb 4Mb x16bits, CLL
410Expected 2/4/2027
Min.: 1
Mult.: 1

64 Mbit 4 M x 16 70 ns 104 MHz 1.95 V 1.7 V 30 mA - 40 C + 85 C SMD/SMT VFBGA-54
ISSI SRAM 18Mb 512Kx36 200Mhz Sync SRAM 3.3v
144Expected 9/17/2026
Min.: 1
Mult.: 1

18 Mbit 512 k x 36 3.1 ns 200 MHz Parallel 3.465 V 3.135 V 475 mA - 40 C + 85 C SMD/SMT FBGA-165 Tray
ISSI IS61WV102416DBLL-10TLI
ISSI SRAM 16Mb High-Speed Async 1Mbx16 10ns
192Expected 10/12/2026
Min.: 1
Mult.: 1

16 Mbit 1 M x 16 10 ns Parallel 3.6 V 2.4 V 90 mA - 40 C + 85 C SMD/SMT

ISSI SRAM 4Mb 2.4-3.6V 10ns 512x8 Async SRAM
270Expected 10/12/2026
Min.: 1
Mult.: 1

4 Mbit 512 k x 8 10 ns Parallel 3.6 V 2.4 V 35 mA - 40 C + 85 C SMD/SMT TSOP-44 Tube
ISSI IS66WVE4M16EALL-70BLI
ISSI SRAM 64Mb Pseudo SRAM Asynch/Pg 4Mx16 55ns
956On Order
Min.: 1
Mult.: 1

64 Mbit 4 M x 16 70 ns Parallel 1.95 V 1.7 V 30 mA - 40 C + 85 C SMD/SMT Tray
ISSI SRAM 1Mb 128Kx8 45MHz Serial SRAM IT
100Expected 9/16/2026
Min.: 1
Mult.: 1

1 Mbit 128 k x 8 15 ns 45 MHz SDI, SPI, SQI 3.6 V 2.7 V 10 mA - 40 C + 85 C SMD/SMT SOIC-8 Tray

ISSI SRAM 1Mb, Low Power/Power Saver,Async,128K x 8,45ns,2.2v-3.6v,32 Pin TSOP I (8x20mm), RoHS
97Expected 11/16/2026
Min.: 1
Mult.: 1

1 Mbit 128 k x 8 45 ns Parallel 3.6 V 2.2 V 26 mA - 40 C + 85 C SMD/SMT TSOP-32 Tray
Renesas Electronics SRAM 4K X 16 DP SRAM 55Factory Stock Available
Min.: 1
Mult.: 1

64 kbit 4 k x 16 20 ns Parallel 5.5 V 4.5 V 240 mA - 40 C + 85 C SMD/SMT TQFP-100 Tray
Microchip Technology SRAM 512K 1.8V SPI SERIAL SRAM SQI EXT Non-Stocked Lead-Time 11 Weeks
Min.: 1
Mult.: 1

512 kbit 64 k x 8 32 ns 16 MHz SDI, SPI, SQI 2.2 V 1.7 V 10 mA - 40 C + 125 C Through Hole PDIP-8 Tube
Microchip Technology SRAM 512K 1.8V SPI SERIAL SRAM SQI Non-Stocked Lead-Time 11 Weeks
Min.: 1
Mult.: 1

512 kbit 64 k x 8 25 ns 20 MHz SDI, SPI, SQI 2.2 V 1.7 V 10 mA - 40 C + 85 C Through Hole PDIP-8 Tube
Microchip Technology SRAM 512K 1.8V SPI SERIAL SRAM SQI Non-Stocked Lead-Time 11 Weeks
Min.: 1
Mult.: 1

512 kbit 64 k x 8 25 ns 20 MHz SDI, SPI, SQI 2.2 V 1.7 V 10 mA - 40 C + 85 C SMD/SMT SOIC-8 Tube
Microchip Technology SRAM 1024K 2.5V SPI SERIAL SRAM SQI EXT Non-Stocked Lead-Time 11 Weeks
Min.: 1
Mult.: 1
: 2.500

1 Mbit 128 k x 8 32 ns 16 MHz SDI, SPI, SQI 5.5 V 2.5 V 10 mA - 40 C + 125 C SMD/SMT TSSOP-8 Reel, Cut Tape
Microchip Technology SRAM 512K 2.5V SPI SERIAL SRAM Vbat Non-Stocked Lead-Time 11 Weeks
Min.: 1
Mult.: 1
: 3.300

512 kbit 64 k x 8 25 ns 20 MHz SDI, SPI 5.5 V 2.5 V 10 mA - 40 C + 85 C SMD/SMT SOIC-8 Reel, Cut Tape

Microchip Technology SRAM 256K 32K X 8 1.7V SERIAL SRAM IND Non-Stocked Lead-Time 21 Weeks
Min.: 1
Mult.: 1

256 kbit 32 k x 8 32 ns 20 MHz SPI 1.95 V 1.7 V 10 mA - 40 C + 85 C Through Hole PDIP-8 Tube
Microchip Technology SRAM 512K 1.8V SPI SERIAL SRAM SQI EXT Non-Stocked Lead-Time 23 Weeks
Min.: 1
Mult.: 1

512 kbit 64 k x 8 32 ns 16 MHz SDI, SPI, SQI 2.2 V 1.7 V 10 mA - 40 C + 125 C SMD/SMT TSSOP-8 Tube
Microchip Technology SRAM 512K 2.5V SPI SERIAL SRAM SQI EXT Non-Stocked Lead-Time 23 Weeks
Min.: 1
Mult.: 1

512 kbit 64 k x 8 32 ns 16 MHz SDI, SPI, SQI 5.5 V 2.5 V 10 mA - 40 C + 125 C SMD/SMT SOIC-8 Tube
Microchip Technology SRAM 512K 2.5V SPI SERIAL SRAM SQI EXT Non-Stocked Lead-Time 23 Weeks
Min.: 1
Mult.: 1

512 kbit 64 k x 8 32 ns 16 MHz SDI, SPI, SQI 5.5 V 2.5 V 10 mA - 40 C + 125 C SMD/SMT TSSOP-8 Tube
Microchip Technology SRAM 4k, 5.0V EERAM EXT Non-Stocked
Min.: 1
Mult.: 1

4 kbit 512 k x 8 400 ns 1 MHz I2C 5.5 V 4.5 V 400 uA - 40 C + 125 C SMD/SMT Tube
Microchip Technology SRAM 4k, 3.0V EERAM EXT Non-Stocked
Min.: 1
Mult.: 1

4 kbit 512 k x 8 400 ns 1 MHz I2C 3.6 V 2.7 V 400 uA - 40 C + 125 C Through Hole PDIP-8 Tube
Renesas Electronics SRAM 32K X 16K Non-Stocked Lead-Time 18 Weeks
Min.: 1
Mult.: 1

512 kbit 32 k x 16 12 ns Parallel 5.5 V 4.5 V 340 mA - 40 C + 85 C SMD/SMT TQFP-100 Tray
Renesas Electronics SRAM 256Kx18 STD-PWR 3.3V SYNC DUAL-PORT RAM Non-Stocked Lead-Time 18 Weeks
Min.: 1
Mult.: 1

4 Mbit 256 k x 18 4.2 ns 133 MHz Parallel 3.45 V 3.15 V 480 mA - 40 C + 85 C SMD/SMT CABGA-256 Tray
Renesas Electronics SRAM 64Kx16 ASYNCHRONOUS 5.0V STATIC RAM Non-Stocked Lead-Time 18 Weeks
Min.: 1
Mult.: 1

1 Mbit 64 k x 16 20 ns Parallel 5.5 V 4.5 V 170 mA - 40 C + 85 C SMD/SMT TSOP-44 Tray
Renesas Electronics SRAM 8K(1KX8)CMOS DUAL PT RAM Non-Stocked Lead-Time 18 Weeks
Min.: 1
Mult.: 1

8 kbit 1 k x 8 25 ns Parallel 5.5 V 4.5 V 110 mA - 40 C + 85 C SMD/SMT TQFP-64 Tray
Renesas Electronics SRAM 1K x 8 Dual Port High Speed RAM Non-Stocked Lead-Time 18 Weeks
Min.: 1
Mult.: 1

8 kbit 1 k x 8 25 ns Parallel 5.5 V 4.5 V 220 mA - 40 C + 85 C SMD/SMT STQFP-64 Tray