Micron XTR NVMe™ SSDs
Micron XTR NVMe™ SSDs are engineered to deliver extreme endurance and enable reliable caching necessary for write-heavy workloads. These devices are purpose-built for data centers seeking a cost-effective substitute for pricier Storage Class Memory (SCM) SSDs for logging and read/write-caching in tiered-storage environments. The combination of Micron NAND and highly-optimized-firmware technology enables these SSDs to deliver 35 Random-Drive Writes per Day (RDWPD) and 60 Sequential-Drive Writes per Day (SDWPD). These devices ensure outstanding affordability by delivering 20% more usable capacity per drive while consuming up to 44% less active power to help reduce operating costs. The XTR SSDs showcase a vertically integrated, industry-proven design, offering comparable real-world endurance and performance to Intel Optane SSDs while enhancing supply reliability. These devices are ideal for caching tiers, buffering, logging, journaling, OLTP, and other write-intensive workloads.
Features
- Reliable caching for the most write-heavy workloads:
- Up to 60 SDWPD (100% 128KB sequential write endurance)
- Up to 35 RDWPD (100% 4KB random write endurance)
- 10x more endurance than TLC-based SSDs
- Up to 35% of Intel Optane SSD endurance at 20% of the cost
- Proven, vertically integrated storage architecture and industry-leading security:
- Third-generation Micron Gen4 NVMe™ architecture for fast and easy qualification
- TAA-compliant SKUs with FIPS 140-3 L2 certifiability at ASIC level to help maximize security
- Similar workload acceleration as the Intel Optane SSD:
- Nearly identical performance for Microsoft® SQL Server® analytics workloads:
- Micron XTR + Micron 6500 ION SSD = 74-minute standard query run time
- Intel Optane SSD + Micron 6500 ION SSD = 73-minute standard query run time
- Delta = 1 minute (~1.3%)
- 44% lower active power consumption
- 20% more usable capacity
- Nearly identical performance for Microsoft® SQL Server® analytics workloads:
Specifications
- Micron® 3D TLC NAND Flash
- PCI Express Gen4:
- U.3 single port (x4) backward compatible with U.2
- NVM Express:
- 132 namespaces supported
- Weighted round-robin with urgent arbitration supported
- Capacity (unformatted):
- U.3: 960GB and 1920GB
- Endurance: (Total Bytes Written (TBW))
- Up to 210,000TB at 60 sequential DWPD
- Up to 125,000TB at 35 random DWPD
- Enterprise sector size supports 512-byte and 4096-byte sector sizes (configurable)
- Security:
- Digitally signed firmware
- FIPS 140-3 L.2 certificate
- TAA-compliant SKUs
- Self-Encrypting Drive (SED) SKUs
- SPDM 1.1 specification
- Isolated security environment
- Micron enterprise security suite
- Hardware root of trust and chain of trust
- TCG Device Identifier Composition Engine (DICE)
- Secure hash SHA-512 (also supports SHA-384 and SHA-256)
- RSA key size and signature scheme 3K/4K
- Latency:
- 60µs READ (typical)
- 15µs WRITE (typical)
- Surprise Insertion/Surprise Removal (SISR) and hotplug capable
- Self-monitoring, Analysis, and Reporting Technology (SMART)
- Field upgradeable firmware with support for activate without reset
- Performance:
- Sequential 128KB READ: Up to 6800MB/s
- Sequential 128KB WRITE: Up to 5600MB/s
- Random 4KB READ: Up to 900,000IOPS
- Random 4KB WRITE: Up to 350,000IOPS
- Reliability:
- MTTF: 2.0M hours @0°C to 55°C and 2.5M hours @0°C to 50°C
- Static and dynamic wear leveling
- Uncorrectable Bit Error Rate (UBER): <1 sector per 1017 bits read
- OCP 1.0a compliant end-to-end data protection
- Enterprise power-loss protection
- 0°C to 70°C operating temperature (commercial)
- U.3 Form factor with 100.45mm x 70.10mm x 15mm dimensions
- Electrical specification:
- U3 power supply: 12V ±10%
- U3 AUX supply: 3.3V ±5%
Applications
- Ideal for caching tiers, buffering, logging, journaling, OLTP, and other write-intensive workloads
- Data centers
Additional Resources
Mechanical Drawing
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Published: 2024-02-06
| Updated: 2024-03-05