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Central Semiconductor 1700V N-Channel Silicon Carbide (SiC) MOSFETs

Central Semiconductor 1700V N-Channel Silicon Carbide (SiC) MOSFETs are designed for high-speed switching and fast reverse recovery applications. These MOSFETs feature a gate-source voltage (VGS) rating of 20V and a continuous drain current (ID) of 37A (CDMS24720-170) or 26A (CDMS24740-170). Both devices have a 28W power dissipation (PD) rating and are packaged in a TO-247 with an operating temperature range of -55°C to 175°C. These Central Semiconductor 1700V SiC MOSFETs support higher breakdown voltage and better thermal conductivity.

Specifications

  • 1700V drain-source voltage (VDS)
  • 20V gate-source voltage (VGS)
  • Continuous drain current (ID)
    • CDMS24720-170: 37A
    • CDMS24740-170: 26A
  • Pulsed drain current (IDM)
    • CDMS24720-170: 80A
    • CDMS24740-170: 40A
  • -55°C to +175°C operating (TJ) and storage junction temperature (Tstg)
  • 28W power dissipation (PD)
  • Drain cut-off current (IDSS) (VDS = 1200V, VGS = 0V)
    • CDMS24720-170: 175nA
    • CDMS24740-170: 15nA
  • Gate-to-source leakage current (IGSS) (VGS = 15V)
    • CDMS24720-170: 120pA
    • CDMS24740-170: 50pA
  • Drain-source on-resistance [rDS(ON)] (VGS = 15V, ID = 10A)
    • CDMS24720-170: 20mΩ
    • CDMS24740-170: 40mΩ

Applications

  • High-speed switching
  • Fast reverse recovery

Package Dimensions

Chart - Central Semiconductor 1700V N-Channel Silicon Carbide (SiC) MOSFETs
Published: 2025-11-11 | Updated: 2025-11-20