Infineon Technologies EiceDRIVER™ 2EDB Gate-Driver ICs
Infineon Technologies EiceDRIVER™ 2EDB Gate-Driver ICs include the 2EDB8259F and 2EDBx259Y, designed to drive Si and SiC MOSFETs and GaN HEMT power switches. The family of dual-channel isolated gate-driver ICs are offered in a DSO package with 4mm input-to-output creepage and facilitates primary isolation employing on-chip coreless transformer (CT) technology. The 2EDBx279Y variants in a 14-pin DSO package offer increased channel-to-channel creepage. The devices are suited for use in applications with higher bus voltage or pollution degrees and generally can ease PCB routing.
The Infineon EiceDRIVER 2EDB Gate-Driver ICs offer optional shoot-through protection (STP) and dead-time control (DTC) functionality. This functionality allows the operation as a dual-channel low-side, dual-channel high-side, or half-bridge gate driver with a configurable dead time. With excellent common-mode transient immunity (CMTI), low part-to-part skew, and fast signal propagation, the components are ideal for use in fast-switching power conversion systems.
Features
- 2-channel isolated gate driver for Si and SiC MOSFETs and GaN HEMT power switches
- Fast input-to-output propagation (38ns) with excellent stability (+9/-5ns)
- Strong output stage of 5A/9A source/sink
- Fast output clamping for VDDA/B < UVLO
- Fast UVLO recovery time (<2μs)
- 4V, 8V, and 15V VDDA/B UVLO options
- CMTI of >150V/ns
- Available in 16/14-pin 150mil DSO package
Applications
- Server, telecom SMPS
- EV off-board chargers
- Low-voltage drives and power tools
- Solar micro-inverters, solar optimizers
- Industrial power supplies (SMPS, residential UPS)
Part Comparasion
Application Diagram
Block Diagram
Published: 2023-09-08
| Updated: 2023-09-29