Infineon Technologies CoolMOS™ C7 Gold (G7) Power MOSFETs

Infineon Technologies CoolMOS™ C7 Gold (G7) Power MOSFETs are housed in the SMD TO-Leadless (TOLL) package using the Kelvin source concept. The G7 MOSFETs combine improved 600V and 650V CoolMOS™ G7 technology, 4-pin Kelvin source capability, and the improved thermal properties of the TO-Leadless package. This enables an SMD solution for high current hard switching topologies like power factor correction (PFC) up to 3kW. For the 600V CoolMOS™ G7, the MOSFETs can be used for resonant circuits like high-end LLC.

The CoolMOS™ G7 technology offers higher efficiency, faster switching, and improved power density due to low R_DS(on). The G7 are housed in a small footprint and reduce production cost through quicker assembly times.

Features

Best-in-class FOM R_DS(on) x Eoss and R_DS(on)x QG
Best-in-class R_DS(on) in smallest footprint
Inbuilt 4th pin Kelvin source configuration and low parasitic source inductance (~1nH)
Is MSL1 compliant, total Pb-free, has easy visual inspection grooved leads
Enables improved thermal performance Rth
Reducing parasitic source inductance by Kelvin source improves efficiency switching and ease-of-use
TOLL package is easy to use and has the highest quality standards

Improved thermals enable SMD TOLL package to be used in higher current designs than has been previously possible
650V G7: FOM RDS(on) x QGis 14% better than the previous 650V CoolMOS™ C7, enabling higher efficiency
600V G7: FOM RDS(on) x QGis 16% better than the previous 600V CoolMOS™ C7, enabling higher efficiency
650V G7: Power density through best-in-class 33mΩ in 115mm² TOLL footprint
600V G7: Power density through best-in-class 28mΩ in 115mm² TOLL footprint