Infineon Technologies N-Channel OptiMOS™ 7 Power MOSFETs
Infineon Technologies N-Channel OptiMOS™ 7 Power MOSFETs are high-performance N-channel transistors designed for demanding power conversion applications. These MOSFETs offer very low on-resistance, superior thermal resistance, and excellent Miller ratio for dv/dt ruggedness. The OptiMOS™ 7 power MOSFETs are optimized for both hard-switching and soft-switching topologies, and FOMoss. These MOSFETs are 100% avalanche tested and are RoHS compliant. The OptiMOS™ 7 power MOSFETs are halogen-free according to IEC61249‑2‑21.
Features
- Very low on-resistance RDS(on)
- Superior thermal resistance
- Optimized for hard/soft‑switching topologies
- Optimized for FOMoss
- 100% avalanche tested
- Halogen‑free according to IEC61249‑2‑21
- Pb‑free lead plating
- RoHS compliant
View Results ( 12 ) Page
| Part Number | Datasheet | Fall Time | Forward Transconductance - Min | Id - Continuous Drain Current | Pd - Power Dissipation | Qg - Gate Charge | Rds On - Drain-Source Resistance | Rise Time | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Typical Turn-Off Delay Time | Typical Turn-On Delay Time |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ISC040N10NM7ATMA1 | ![]() |
4.4 ns | 55 S | 130 A | 150 W | 39 nC | 4 mOhms | 3.3 ns | 20 V | 3.2 V | 17.2 ns | 9.4 ns |
| ISC024N08NM7ATMA1 | ![]() |
5 ns | 130 S | 167 A | 150 W | 49 nC | 2.4 mOhms | 3.8 ns | 20 V | 3.2 V | 20.4 ns | 10.3 ns |
| IQEH64NE2LM7UCGSCATMA1 | ![]() |
3.6 ns | 50 S | 348 A | 130 W | 22 nC | 640 uOhms | 1.6 ns | 16 V | 2 V | 25.5 ns | 6.2 ns |
| ISC034N08NM7ATMA1 | ![]() |
3.4 ns | 50 S | 122 A | 115 W | 34 nC | 3.4 mOhms | 2.5 ns | 20 V | 3.2 V | 13.8 ns | 8.6 ns |
| IQEH46NE2LM7ZCGSCATMA1 | ![]() |
5.2 ns | 100 S | 430 A | 150 W | 29 nC | 480 uOhms | 2 ns | 12 V | 1.7 V | 35 ns | 5.9 ns |
| IQEH50NE2LM7UCGSCATMA1 | ![]() |
4.4 ns | 110 S | 298 A | 150 W | 27 nC | 500 uOhms | 2 ns | 16 V | 2 V | 29 ns | 7 ns |
| IQEH50NE2LM7ZCGATMA1 | ![]() |
5.2 ns | 100 S | 422 A | 150 W | 29 nC | 500 uOhms | 2 ns | 12 V | 1.7 V | 35 ns | 5.9 ns |
| IQEH54NE2LM7UCGATMA1 | ![]() |
4.4 ns | 55 S | 406 A | 150 W | 27 nC | 540 uOhms | 2 ns | 16 V | 2 V | 29 ns | 7 ns |
| IQEH68NE2LM7UCGATMA1 | ![]() |
5.1 ns | 50 S | 338 A | 130 W | 22 nC | 680 uOhms | 17 ns | 16 V | 2 V | 24 ns | 7.7 ns |
| IQEH80NE2LM7UCGSCATMA1 | ![]() |
2.7 ns | 50 S | 282 A | 107 W | 17.2 nC | 800 uOhms | 1.4 ns | 16 V | 2 V | 20.1 ns | 5.4 ns |
Published: 2025-09-24
| Updated: 2026-03-03

