IXYS SiC (Silicon Carbide) Diodes & Rectifiers
IXYS SiC (Silicon Carbide) Diodes and Rectifiers provide extremely fast switching, high-frequency operation with zero recovery, and temperature-independent behavior. Coupled with the low inductance IXYS DE-Series RF package, these SiC Diodes and Rectifiers diodes can be utilized in any number of fast switching diode circuits or high-frequency converter applications.
Features
- Optimized for high speed
- Zero reverse recovery
- Zero forward recovery
- Temperature independent switching behavior
- Low leakage current
- Easy to mount, no insulators needed
- High power density
- Isolated substrate
- High isolation voltage
- Excellent thermal transfer
- Increased temperature and power cycling capability
- Very low insertion inductance
- No Beryllium Oxide (BeO) or other hazardous materials
- RoHS compliant
Applications
- Switched-mode power supply (SMPS) applications
- Output rectifier for high-frequency power converters
- Resonant converters
- General high-speed rectifier circuits
Related MOSFETs
IXYS Power MOSFET
Designed for RF and high-speed switching applications.
Published: 2017-10-13
| Updated: 2022-03-29