GeneSiC Semiconductor 4th Generation SiC Schottky MPS™ Diodes
GeneSiC Semiconductor 4th Generation SiC Schottky MPS™ (Merged-PiN-Schottky) Diodes offer superior price-performance index, industry-leading surge current and avalanche robustness, and high quality to provide high levels of efficiency and system reliability in high-frequency switching.
The GeneSiC Semiconductor 4th Generation SiC Schottky MPS™ Diodes are offered in industry-standard SOT-227, TO-220-2, TO-247-2, TO-247-3, TO-252-2, and TO-263-7 packages and feature a 175°C maximum operating temperature.
Features
- Gen4 Thin Chip Technology for low diode forward voltage (VF)
- Optimal price-performance
- Superior Figure of Merit – QC x VF
- Enhanced Surge Current Capability
- 100% Avalanche (UIL) Tested
- Low Thermal Resistance for Cooler Operation
- Temperature Independent Fast Switching
- Positive Temperature Coefficient of VF
Applications
- Boost diode in power factor correction (PFC)
- Solar inverters
- Uninterruptible power supplies (UPS)
- Battery chargers
- Freewheeling and anti-parallel diode in inverters
- Motor drives
- Switched-mode power supplies (SMPS)
- AC-DC converters and DC-DC converters
- LED and HID lighting
- Industrial power supplies
- EV fast chargers
- Transportation
- Pulsed power
Specifications
- Package options: TO-252-2 , TO-263-7, TO-220-2, TO-247-2, TO-247-3, SOT-227
- 650V, 1200V, and 1700V repetitive reverse voltage (VRRM)
- 2A to 300A forward current (IF)
- -55°C to +175°C operating temperature range (TJ)
- Low junction capacitance (C) and low capacitive charge (QC)
- No reverse recovery, no forward recovery
- Easy to parallel without thermal runaway
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