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Nexperia GANE3R9-150QBA Gallium Nitride (GaN) FET

Nexperia GANE3R9-150QBA Gallium Nitride (GaN) FET is a general-purpose 150V, 3.9mΩ Gallium Nitride (GaN) FET. The GANE3R9-150QBA is a normally-off e-mode device providing superior performance and very low on-state resistance. The Nexperia GANE3R9-150QBA is available in a Very-Thin-Profile Quad Flat No-lead package (VQFN).

Features

  • Enhancement mode - normally off power switch
  • Ultra high-frequency switching capability
  • No-body diode
  • Low gate charge, low output charge
  • Qualified for standard applications
  • RoHS, Pb-free, REACH-compliant
  • High efficiency and high power density
  • Very-thin-profile quad flat no-lead package (VQFN) 4.0mm x 6.0mm

Applications

  • High power density and high-efficiency power conversion
  • AC-to-DC converters (secondary stage)
  • High-frequency DC-to-DC converters in 48 V systems
  • Fast battery charging, mobile phone, laptop, tablet and USB type-C chargers
  • Datacom and telecom (AC-to-DC and DC-to-DC) converters
  • Motor drives
  • LiDAR (non-automotive)
  • Class D audio amplifiers
Application Circuit Diagram - Nexperia GANE3R9-150QBA Gallium Nitride (GaN) FET
Published: 2024-06-04 | Updated: 2024-07-02