onsemi 650V EliteSiC (Silicon Carbide) Schottky Diodes
onsemi 650V EliteSiC (Silicon Carbide) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.
Features
- Ease of paralleling
- High surge current capacitance
- Maximum junction temperature of +175°C
- No reverse/forward recovery
- High switching frequency
- Low forward voltage (VF)
- Positive temperature coefficient
- AEC-Q101 qualified and PPAP capable
Applications
- Automotive HEV-EV DC-DC converters
- Automotive HEV-EV onboard chargers
- Industrial power
- PFC
- Solar
- UPS
- Welding
Specifications
- Surface mount or through-hole
- 4A to 50A forward current range
- 1.38V to 1.7V forward voltage range
- 21A to 882A forward surge current range
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Associated Products
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onsemi FFSH SiC Schottky Diodes
Silicon Carbide devices in an industry standard TO-247 package.
onsemi D1 EliteSiC Diodes
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onsemi D2 EliteSiC Diodes
Range of high-performance diodes designed for applications requiring a voltage rating of 650V.
Learn More About EliteSiC
onsemi EliteSiC
Addresses the needs of demanding applications like solar inverters, and electric vehicle chargers.
Published: 2019-05-21
| Updated: 2024-07-23