onsemi UJ3D 650V/1200V/1700V SiC Schottky Diodes
onsemi UJ3D 650V/1200V/1700V SiC Schottky Diodes are designed to take advantage of SiC's superior physical characteristics over standard silicon, with 4 times better dynamic characteristics and 15% less forward voltage (VF). With zero reverse recovery charge and a high maximum junction temperature of +175°C, these devices are ideally suited for high-frequency and high-efficiency power systems with minimum cooling requirements. These devices from onsemi feature an optimized forward voltage drop, enhanced surge capability, and ultra-low reverse recovery Qc(Qrr) and are ideally suited for telecom power, server PSUs, battery chargers, and any application that requires high switching speeds and reduced losses. All devices are qualified according to AEC-Q101 standards and manufactured in a TS 16949-certified supply chain, making them ideal for automotive applications.
Features
- 650V, 1200V, and 1700V options
- Positive temperature coefficient for safe operation and ease of paralleling
- +175°C maximum operating junction temperature
- Easy paralleling
- Extremely fast switching, not dependent on temperature
- No reverse or forward recovery
- Enhanced surge current capability
- Superior thermal performance
- MPS (Merged Pin Schottky) structure
- 100% UIS tested
- AEC-Q101 qualified
- Package options
- TO-220-2L
- TO-247-3L
- Halogen free and RoHS compliant
Applications
- Automotive
- Power converters
- Industrial motor drives
- Telecom power
- Server PSUs
- Battery chargers
- Switching-mode power supplies
- Power factor correction modules
Product Catalogs
Quality Certifications
Published: 2019-04-24
| Updated: 2025-07-25