Renesas Electronics RTDACHB0000RS-MF-1 Evaluation Kit
Renesas Electronics RTDACHB0000RS-MF-1 Evaluation Kit supports flexible experimentation with GaN BDS modulation and operation. This kit offers key components such as GaN BDS (TP65B110HRU), MCUs, and an OpAmp. The RTDACHB0000RS-MF-1 evaluation kit provides a half-bridge GaN configuration that serves as a building block for multiple power topologies. This kit offers multiple options to drive the HB, including MCU-based PWM generation and user-supplied PWM signals. The RTDACHB0000RS-MF-1 evaluation kit features on-board AC zero‑cross detection and ZVS soft‑switching operation.
Features
- Half-bridge Bi-Directional Switch (BDS) Gallium Nitride (GaN) configuration
- Multiple options to drive the HB:
- MCU-based PWM generation
- User-supplied PWM signals
- Flexible platform to experience GaN BDS modulation and operation
- On board AC zero cross detection
- ZVS soft switching operation
Board Overview
Application Circuit Diagram
Related Bi-Directional Switch
Renesas Electronics TP65B110HRU Bi-Directional Switch (BDS)
650V and 110mΩ normally-off Gallium Nitride (GaN) BDS in a compact TOLT package.
Published: 2026-03-16
| Updated: 2026-03-20