SemiQ GEN3 1200V SiC MOSFET Discrete Devices
SEMiQ GEN3 1200V SiC MOSFET Discrete Devices are third-generation SiC MOSFETs and are 20% smaller than SEMiQ’s second-generation SiC MOSFETs. These devices have been developed to increase performance and cut switching losses in high-voltage applications.
Each of the SEMiQ GEN3 1200V SiC MOSFETs are tested beyond 1400V. The devices target EV-charging stations, solar inverters, renewable power generation, industrial power supplies, motor-driver applications, and induction heating.
Features
- High-speed switching
- Reliable body diode
- All parts tested to greater than 1400V
- Avalanche tested
- GP3T016A120H to 800mJ
- GP3T020A120H to 700mJ
- GP3T040A120H to 330mJ
- GP3T080A120H to 160mJ
- Driver source pin for gate driving
- Lower capacitance
- Higher system efficiency
- Easy to parallel
- Lower switching loss
- Longer creepage distance (GP3T020A120H, GP3T040A120H, and GP3T080A120H)
Applications
- Solar inverters
- Switch-mode power supplies, UPS
- Induction heating and welding
- EV charging stations
- High voltage DC-DC converters
- Motor drives
Circuit Diagram
Package Diagram
Related SiC Products
SemiQ GP2T020A120H 1200V SiC MOSFET
Offers reduced switching losses, higher efficiency, and increased power density.
SemiQ GP2T030A170 QSiC™ 1700V SiC MOSFET
Enables more compact designs at a large scale in medium-voltage high-power conversion applications.
SemiQ GP2T040A120x SiC MOSFETs
Benefit Power Factor Correction, DC-DC Converter Primary Switching, and Synchronous rectification.
SemiQ GP2T080A120H 1200V SiC MOSFET
Features high-speed switching, a driver source pin for gate driving, and a reliable body diode.
SemiQ GP2T080A120U 1200V SiC N-Channel MOSFET
Offers low capacitance and high system efficiency with all parts tested to above 1400V.
SemiQ GEN3 1200V SiC MOSFET Power Modules
With an isolated backplate, based on third-generation SiC technology, and tested at over 1400V.