ROHM Semiconductor SCT4013DR N-Channel SiC Power MOSFET
ROHM Semiconductor SCT4013DR N-Channel Silicon Carbide (SiC) Power MOSFET is a high-performance device designed for demanding power electronics applications. Featuring a drain-source voltage rating of 750V and a 105A continuous drain current (at +25°C), this device offers exceptional efficiency and thermal performance. The low on-resistance of 13mΩ (typical) and fast switching characteristics make the ROHM SCT4013DR ideal for high-frequency applications such as power supplies, inverters, and motor drives. The SCT4013DR also benefits from the inherent advantages of SiC technology, including a high breakdown voltage, low switching losses, and superior thermal conductivity, which contribute to reduced system size and improved reliability. Packaged in a TO-247-4L case, the MOSFET supports robust thermal management and ease of integration into existing designs.
Features
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive
- TO-247-4L package
- Pb-free lead plating
- RoH compliant
Applications
- Solar inverters
- DC/DC converters
- Switch-mode power supplies
- Induction heating
Specifications
- 750V maximum drain-source voltage
- Maximum continuous drain/source current
- 105A at +25°C
- 74A at +100°C
- 80μA maximum zero gate voltage drain current
- 233A maximum pulsed drain current
- Body diode
- Maximum forward current
- 105A pulsed
- 233A surge
- 3.3V typical forward voltage
- 16ns typical reverse recovery time
- 290nC reverse recovery charge
- 36A typical peak reverse recovery current
- Maximum forward current
- -4V to 21V maximum DC gate-source voltage range
- -4V to 23V maximum gate-source surge voltage range
- Maximum recommended gate-source drive voltage
- 15V to 18V maximum turn-on range
- 0V turn-off
- ±100nA gate-source leakage current
- 2.8V to 4.8V gate threshold voltage range
- Drain-source on-state resistance
- 16.9mΩ maximum static at +25°C
- 13mΩ typical
- 1Ω typical gate input resistance
- 0.48K/W junction-to-case thermal resistance
- 32S transconductance
- Typical capacitance
- 4580pF input
- 203pF output
- 10pF reverse transfer
- 263pF effective output, energy-related
- Typical gate
- 170nC total
- 39nC source charge
- 42nC drain charge
- Typical time
- 17ns turn-on delay
- 32ns rise
- 82ns turn-off delay
- 17ns fall
- Typical switching losses
- 500μJ turn-on
- 310μJ turn-off
- 11.5µs to 12.0µs typical short-circuit withstand time
- +175°C maximum virtual junction temperature
Inner Circuit
Related MOSFETs
ROHM Semiconductor 4th Generation N-Channel SiC Power MOSFETs
Provides low on-resistances with improvements in the short-circuit withstand time.
ROHM Semiconductor AEC-Q101 SiC Power MOSFETs
Can be used to boost switching frequency, reducing the size of the external components.
Published: 2025-06-13
| Updated: 2025-06-19