It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

UF3SC120040B7S

Name: onsemi UF3SC120040B7S
Brand: onsemi
SKU: 431-UF3SC120040B7S
Price: 27.46 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

431-UF3SC120040B7S

Mfr. No:

UF3SC120040B7S

Mfr.:

onsemi

Description:

SiC MOSFETs 1200V/40MOSICFETG3TO263-7

Datasheet:

UF3SC120040B7S Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about onsemi UF3SC120040B7S

In Stock: 270

Stock:: 270 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 270 will be subject to minimum order requirements.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	27,46 €	27,46 €
	21,50 €	215,00 €
	21,49 €	2.149,00 €
	21,37 €	10.685,00 €
Full Reel (Order in multiples of 800)
	20,08 €	16.064,00 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	47 A
Rds On - Drain-Source Resistance:	35 mOhms
Vgs - Gate-Source Voltage:	- 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	6 V
Qg - Gate Charge:	43 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	214 W
Channel Mode:	Enhancement
Tradename:	SiC FET
Brand:	onsemi
Configuration:	Single
Fall Time:	7 ns, 8 ns
Moisture Sensitive:	Yes
Packaging:	Reel
Packaging:	Cut Tape
Product:	SiC FETs
Product Type:	SiC MOSFETS
Rise Time:	12 ns, 13 ns
Series:	UF3SC
Factory Pack Quantity:	800
Subcategory:	Transistors
Technology:	SiC
Type:	SiC FET
Typical Turn-Off Delay Time:	47 ns
Typical Turn-On Delay Time:	37 ns
Unit Weight:	4,675 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

UF3SC120040B7S Datasheet

PCN

This functionality requires JavaScript to be enabled.

CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

UF3SC High-Performance SiC FETs in D2-PAK

onsemi UF3SC High-Performance SiC FETs in D2-PAK-7L (7-lead Kelvin package) are based on a unique 'cascode' circuit configuration and feature excellent reverse recovery. This circuit configuration includes a normally-on SiC JFET to be co-packaged with Si MOSFET to produce a normally-off SiC FET device. The UF3SC FETs feature standard gate-drive characteristics that allow true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs, or Si super-junction devices. These high-performance SiC FETs operate at 175°C maximum temperature, 43nC low gate charge, and 5V typical threshold voltage. Typical applications include telecom and server power, motor drives, induction heating, and industrial power supplies.

High-Performance SiC FETs

onsemi High-Performance SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, and excellent cost-effectiveness. The components are offered in standard thru-hole (including Kelvin) and surface mount packages. The family comprises the UF4C/SC, UJ4C/SC, UJ3C, and UF3C/SC series and is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device.

UF3SC 650V and 1200V High-Performance SiC FETs

onsemi UF3SC 650V and 1200V High-Performance SiC FETs are silicon carbide devices with low R_DS(on) of 7mΩ to 45mΩ built for fast switching speeds and lower switching losses. These devices are based on a unique cascode circuit configuration and exhibit an ultra-low gate charge. The cascode configuration employs a normally-on SiC JFET co-packaged with a Silicon MOSFET to produce a normally-off SiC FET device. The UF3SC FETs feature standard gate-drive characteristics that allow a true "drop-in replacement" to Si IGBTs, Si FETs, SiC MOSFETs, or Si super-junction devices. These SiC FETs include low intrinsic capacitance and excellent reverse recovery. onsemi UF3SC FETs operate at -55°C to +175°C temperature range and a -20V to +20V gate-source voltage range. These SiC FETs are ideal for electric-vehicle (EV) charging, photovoltaic (PV) inverters, motor drives, switch-mode power supplies, power factor correction (PFC) modules, and induction heating. The onsemi UF3SC SiC FETs are available in TO-247-3L and TO-247-4L package options for faster switching and clean gate waveforms.