Results: 3
Select Image Part #
 Mfr.
Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
IXYS SiC MOSFETs 1200V 62mohm (25A a. 25C) SiC MOSFET in isolated TO247-3L
Datasheet
384In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3L N-Channel 1 Channel 1.2 kV 28 A 81 mOhms - 4 V, + 21 V 4.8 V 52 nC - 40 C + 150 C 75.3 W Enhancement
IXYS SiC MOSFETs 1200V 36mohm (43A a. 25C) SiC MOSFET in isolated TO247-3L
Datasheet
468In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3L N-Channel 1 Channel 1.2 kV 45 A 47 mOhms - 4 V, + 21 V 4.8 V 79 nC - 40 C + 150 C 142 W Enhancement
IXYS SiC MOSFETs 1200V 18mohm (30A a. 25C) SiC MOSFET in isolated TO247-3L
Datasheet
470In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3L N-Channel 1 Channel 1.2 kV 85 A 22.5 mOhms - 4 V, + 21 V 4.8 V 154 nC - 40 C + 150 C 266 W Enhancement