All Results (163)

Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS
Toshiba MOSFETs AUTO AEC-Q SS MOS N-ch Logic-Level Gate Drive VDSS:60V IC:6.0A PD:1.5W TSOP6F 37.518In Stock
Min.: 1
Mult.: 1
: 3.000

Toshiba Digital Transistors AUTO AEC-Q NPN Q1BSR=4.7kO, Q1BER=47kO, VCEO=50V, IC=0.1A (SOT-723) 41.880In Stock
Min.: 1
Mult.: 1
: 8.000

Toshiba Digital Transistors AUTO AEC-Q 2-in-1 (Point-symmetrical) NPN x 2 Q1BSR=4.7kO, Q1BER=4.7kO, VCEO=50V, IC=0.1A (SOT-563) 34.280In Stock
Min.: 1
Mult.: 1
: 4.000

Toshiba Digital Transistors AUTO AEC-Q PNP Q1BSR=4.7kO, VCEO=-50V, IC=-0.1A (SOT-346) 5.980In Stock
Min.: 1
Mult.: 1
: 3.000

Toshiba Bipolar Transistors - BJT AUTO AEC-Q NPN Tr VCEO:50V Ic:0.15A hFE:350-700 SOT-323 (USM) 2.308In Stock
Min.: 1
Mult.: 1
: 3.000

Toshiba Digital Transistors AUTO AEC-Q TR NPN Q1BSR=47kOhm, Q1BER=10kOhm, VCEO=50V, IC=0.1A (SOT-346) 5.983In Stock
Min.: 1
Mult.: 1
: 3.000

Toshiba Digital Transistors AUTO AEC-Q Single PNP Q1BSR=10kO, VCEO=-50V, IC=-0.1A (SOT-416) 5.900In Stock
Min.: 1
Mult.: 1
: 3.000

Toshiba Digital Transistors AUTO AEC-Q Single PNP Q1BSR=2.2kO, Q1BER=47kO, VCEO=-50V, IC=-0.1A (SOT-346) 2.715In Stock
Min.: 1
Mult.: 1
: 3.000

Toshiba Digital Transistors AUTO AEC-Q TR PNP Q1BSR=4.7kOhm, Q1BER=10kOhm, VCEO=-50V, IC=-0.1A (SOT-346) 5.985In Stock
Min.: 1
Mult.: 1
: 3.000

Toshiba Digital Transistors AUTO AEC-Q Single PNP Q1BSR=2.2kO, Q1BER=10kO, VCEO=-50V, IC=-0.1A (SOT-416) 5.998In Stock
Min.: 1
Mult.: 1
: 3.000

Toshiba Bipolar Transistors - BJT AUTO AEC-Q PNP + PNP Tr VCEO:-50V Ic:-0.15A hFE:120-240 SOT-563 (ES6) 6.250In Stock
Min.: 1
Mult.: 1
: 4.000

Toshiba Bipolar Transistors - BJT AUTO AEC-Q NPN + NPN Tr VCEO:50V Ic:0.15A hFE:200-400 SOT-363 (US6) 5.644In Stock
Min.: 1
Mult.: 1
: 3.000

Toshiba MOSFETs AUTO AEC-Q SS MOS N-ch Logic-Level Gate Drive VDSS:100V IC:3.5A PD:1.5W TSOP6F 4.724In Stock
Min.: 1
Mult.: 1
: 3.000

Toshiba MOSFETs AUTO AEC-Q SS MOS N-ch + P-ch Low Voltage Gate Drive VDSS:30V IC:4A PD:1.5W TSOP6F 6.000In Stock
Min.: 1
Mult.: 1
: 3.000

Toshiba Bipolar Transistors - BJT AUTO AEC-Q PNP + NPN Tr VCEO:-50V Ic:-0.15A hFE:200-400 SOT-563 (ES6) 7.762In Stock
Min.: 1
Mult.: 1
: 4.000

Toshiba Bipolar Transistors - BJT AUTO AEC-Q NPN + NPN Tr VCEO:50V Ic:0.15A hFE:120-240 SOT-363 (US6) 5.757In Stock
Min.: 1
Mult.: 1
: 3.000

Toshiba Bipolar Transistors - BJT AUTO AEC-Q PNP + PNP Tr VCEO:-50V Ic:-0.15A hFE:200-400 SOT-563 (ES6) 7.700In Stock
Min.: 1
Mult.: 1
: 4.000

Toshiba MOSFETs AUTO AEC-Q SS MOS P-ch Logic-Level Gate Drive VDSS:-40V IC:-7A PD:1.5W TSOP6F 5.109In Stock
Min.: 1
Mult.: 1
: 3.000

Toshiba MOSFETs AUTO AEC-Q SS MOS N-ch Logic-Level Gate Drive VDSS:100V IC:10A PD:1.5W TSOP6F 7.484In Stock
Min.: 1
Mult.: 1
: 3.000

Toshiba ESD Protection Diodes / TVS Diodes AUTO AEC-Q Bidirectional ESD Prot. Diode CT:9pF VBR:16.2V @1mA VESD:+/-30V IPP:2.5A IR:0.1uA SOD-323 7.485In Stock
Min.: 1
Mult.: 1
: 3.000

Toshiba Digital Transistors AUTO AEC-Q Single PNP Q1BSR=4.7kO, VCEO=-50V, IC=-0.1A (SOT-416) 3.000In Stock
Min.: 1
Mult.: 1
: 3.000

Toshiba Bipolar Transistors - BJT AUTO AEC-Q PNP Tr VCEO:-50V Ic:-0.15A hFE:200-400 SOT-346 (S-Mini) 11.216In Stock
Min.: 1
Mult.: 1
: 3.000

Toshiba Bipolar Transistors - BJT AUTO AEC-Q PNP Tr VCEO:-50V Ic:-0.15A hFE:70-140 SOT-346 (S-Mini) 5.779In Stock
Min.: 1
Mult.: 1
: 3.000

Toshiba Bipolar Transistors - BJT AUTO AEC-Q PNP Tr VCEO:-50V Ic:-0.15A hFE:120-240 SOT-346 (S-Mini) 7.689In Stock
Min.: 1
Mult.: 1
: 3.000

Toshiba Bipolar Transistors - BJT AUTO AEC-Q PNP Tr VCEO:-50V Ic:-0.15A hFE:200-400 SOT-323 (USM) 7.077In Stock
Min.: 1
Mult.: 1
: 3.000